Indium(III) phosphide
From Wikipedia, the free encyclopedia
| Indium(III) phosphide | |
|---|---|
| Image:Indium(III) phosphide.jpg | |
| IUPAC name | Indium phosphide |
| Other names | Indium(III) phosphide |
| Identifiers | |
| CAS number | [22398-80-7] |
| Properties | |
| Molecular formula | InP |
| Molar mass | 145.792 g/mol |
| Appearance | Black cubic crystals. |
| Density | 4.81 g/cm3, solid. |
| Melting point |
1062°C (1335.15 K) |
| Boiling point |
No information. |
| Solubility in water | ? g/100 ml (?°C) |
| Structure | |
| Crystal structure | Zinc Blende |
| Hazards | |
| Main hazards | In Compounds: Highly toxic via subcutaneous and moderately toxic via oral routes. Symptoms of acute indium intoxication
are anorexia, localized convulsive motions, hind-leg paralysis, pulmonary edema, necrotizing pneumonia, and renal and hepatic damage with resultant dysfunction. Chronic indium intoxication leads to weight loss, poor growth, and extensive necrotic damage to the liver and kidneys. |
| Related compounds | |
| Other anions | InN, InAs, InSb. |
| Other cations | Gallium phosphide, Aluminium phosphide |
| Related compounds | Gallium arsenide phosphide |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
|
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
Contents |
[edit] Optical properties
The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by
where λ is the wavelength in micrometres.
This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.
[edit] References
| This article does not cite any references or sources. (February 2008) Please help improve this article by adding citations to reliable sources. Unverifiable material may be challenged and removed. |
[edit] External links
- Extensive site on the physical properties of indium phosphide (Ioffe institute)
- ONR National Compound Semiconductor Roadmap entry
- InP conference series at IEEE
- Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier (2006 news)
- Semiconductor Today: Online resource covering compound semiconductors and advanced silicon materials and devices

