Gallium arsenide phosphide
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Gallium arsenide phosphide (GaAsP) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide.
Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrate to form a GaP/GaAsP heterostructure. It can be doped with nitrogen (GaAsP:N) [1].
[edit] See also
- Gallium arsenide
- Gallium phosphide
- Indium gallium arsenide phosphide
- Indium gallium phosphide
- Aluminium gallium arsenide phosphide
- Gallium indium arsenide antimonide phosphide
[edit] References
- ^ Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes, Tadashige Sato and Megumi Imai, Jpn. J. Appl. Phys. vol. 41 pp. 5995-5998 (2002) doi:10.1143/JJAP.41.5995
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