Image:TyTunnelling.png
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| Description |
English: Schematic representation of an electron (e, right) tunnelling through a barrier of "height" (vertical dimension is energy) e*V_b and thickness (horizontal dimension is spatial) d_b. e is the elementary charge, -1.6E-19 Coulomb, V is the bias voltage leading to a current flowing between the right and the left "electrode" (side of the barrier).
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| Source |
Created by Torsten Henning and published in Charging effects in niobium nanostructures, PhD thesis, Mikroelektronik och Nanovetenskap, Chalmers Tekniska Högskola AB och Göteborgs Universitet, Göteborg 1999. Full text available online [1] as www.arxiv.org e-print cond-mat/9901308. |
| Date |
Göteborg 1999 |
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| Permission (Reusing this image) |
see below |
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This file is licensed under Creative Commons Attribution 2.5 License In short: you are free to distribute and modify the file as long as you attribute its author(s) or licensor(s). |
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| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 15:34, 12 October 2005 | 915×650 (23 KB) | DrTorstenHenning | ({{English}} Schematic representation of an electron (e, right) tunnelling through a barrier of "height" (vertical dimension is energy) e*V_b and thickness (horizontal dimension is spatial) d_b. e is the elementary charge, -1.6E-19 Coulomb, V is the b) |
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