Stress migration

From Wikipedia, the free encyclopedia

This article is orphaned as few or no other articles link to it. Please help introduce links in articles on related topics. (November 2006)

The introduction to this article provides insufficient context for those unfamiliar with the subject. Please help improve the article with a good introductory style.

Stress Migration is a failure mechanism that often occurs in IC metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impededs the IC performance. Stress Migration is often referred as Stress Induced Voiding or SIV.