Image:Silicon dislocation orientation 111 mag 500x 2.png
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[edit] Summary
- Title: Dislocation in Si crystal, orientation 111
- Desc: Image of dislocation in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of the dislocation.
- Author: Twisp
- Date: 24.08.2005
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File history
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| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 00:17, 13 September 2005 | 768×576 (574 KB) | Twisp | (* Title: Dislocation in Si crystal, orientation 111 * Desc: Image of dislocation in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of the dislocation. * Auth) |
