Image:Silicon dislocation orientation 111 mag 500x.png
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[edit] Summary
- Title: Dislocations in Si crystal, orientation 111
- Desc: Image of dislocations in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of dislocations.
- Author: Twisp
- Date: 24.08.2005
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I, the copyright holder of this work, hereby release it into the public domain. This applies worldwide. In case this is not legally possible: Afrikaans | Alemannisch | Aragonés | العربية | Asturianu | Български | Català | Česky | Cymraeg | Dansk | Deutsch | Eʋegbe | Ελληνικά | English | Español | Esperanto | Euskara | Estremeñu | فارسی | Français | Galego | 한국어 | हिन्दी | Hrvatski | Ido | Bahasa Indonesia | Íslenska | Italiano | עברית | Kurdî / كوردی | Latina | Lietuvių | Latviešu | Magyar | Македонски | Bahasa Melayu | Nederlands | Norsk (bokmål) | Norsk (nynorsk) | 日本語 | Polski | Português | Ripoarisch | Română | Русский | Shqip | Slovenčina | Slovenščina | Српски / Srpski | Svenska | ไทย | Tagalog | Türkçe | Українська | Tiếng Việt | Walon | 中文(简体) | 中文(繁體) | zh-yue-hant | +/- |
File history
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| Date/Time | Dimensions | User | Comment | |
|---|---|---|---|---|
| current | 00:15, 13 September 2005 | 768×576 (650 KB) | Twisp | (* Title: Dislocations in Si crystal, orientation 111 * Desc: Image of dislocations in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of dislocations. * Autho) |
