Talk:Resistive random-access memory

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[edit] Merge with PRAM

This is strictly the same technology as "Phase-change memory". Specific RRAM content should be merged into the "Phase-change memory" page.

Disagree: A reading of patent 6946702 suggests phase-change memory and the resistance random access memory described in the patent use a fundamentally different memory storage element. The Perovskite material requires both a positive and negative voltage to switch, which would presumably be generated by on-device charge pumps. The 1R1D device on which Winbond's patent is based is a single-write device. This forces the inclusion of reset lines to "erase" the cell so it may be reprogrammed. This appears to be Winbond's attempt to pursue something similar to Ovonics memory, so it would not be surprising to see it marketed in the same manner as PRAM and used in similar applications. However, the technology is not the same, and so I think it's fair to keep the articles separate.

That said, much of the text of the RRAM page seems to describe PRAM, not RRAM. So either the link to Winbond's patent should be removed and the page merged with PRAM, or the text describing RRAM as essentially PRAM should be corrected.Fhaigia 11:57, 15 July 2007 (UTC)

Why they shouldn't be merged There is a similarity in terminology between PRAM and RRAM but that by itself shouldn't justifying merging the articles as they stand. The biggest reason not to merge is PRAM or phase-change memory is based on measurable changes in microstructure (crystalline<->amorphous) which you can detect by cross-sectioning a PRAM cell. You won't detect the same in so-called RRAM. In fact, anyone would be hard-presssed to describe the mechanism behind RRAM, especially in perovskites.Guiding light 06:18, 17 July 2007 (UTC)

[edit] Companies Listed

Winbond's name is on the patent, so one assumes they are developing this technology. The technology being used at Samsung is not the same (evidenced by the fact that Winbond is not suing Samsung for infringement, nor has Samsung paid licensing fees to Winbond). Aside from the choice of name, it is unclear from the linked news article whether Sharp is pursing the technology identified in patent 6946702, or something else. I have heard Spansion is not pursuing any type of resistive nonvolatile memory, whether it be RRAM or PRAM. I am also doubtful of Fujitsu's involvement. In short, what's the source for the claim that all these companies are pursuing this technology? Added a citation tag. Fhaigia 11:57, 15 July 2007 (UTC)