Resistor–transistor logic

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Schematic of basic two-input RTL NOR gate.
Schematic of basic two-input RTL NOR gate.

Resistor–transistor logic (RTL) is a class of digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. RTL is the earliest class of transistorized digital logic circuit used; other classes include diode–transistor logic (DTL) and transistor–transistor logic (TTL).

Contents

[edit] Function

In Transistor Component Circuits IBM informs us, “The logical function is performed by the input resistor network and the invert function is accomplished by the common emitter transistor configuration.”[1]

[edit] Advantages

The primary advantage of RTL technology was that it involved a minimal number of transistors, which was an important consideration before integrated circuit technology, as transistors were the most expensive component to produce. Early IC logic production (such as Fairchild's in 1961) used the same approach briefly, but quickly transitioned to higher-performance circuits such as diode–transistor logic and then transistor–transistor logic (starting 1963 at Sylvania), since diodes and transistors were no more expensive than resistors in the IC.[2]

[edit] Limitations

The obvious disadvantage of RTL is its high current dissipation when the transistor conducts to overdrive the output biasing resistor. This requires that more current be supplied to and heat be removed from RTL circuits. In contrast, TTL circuits minimize both of these requirements.

Lancaster says that integrated circuit RTL NOR gates (which have one transistor per input) may be constructed with "any reasonable number" of logic inputs, and gives an example of an 8-input NOR gate.[3]

A standard integrated circuit RTL NOR gate can drive up to 3 other similar gates. Alternatively, it has enough output to drive up to 2 standard integrated circuit RTL "buffers", each of which can drive up to 25 other standard RTL NOR gates.[3]

[edit] Speeding up RTL

Various companies applied the following speed-up methods to discrete RTL.

Transistor switching speed has increased steadily from the first transistorized computers through the present. The GE Transistor Manual (7th ed., p.181, or 3rd ed., p.97 or intermediate editions) recommends gaining speed by using higher-frequency transistors, or capacitors, or a diode from base to collector to present saturation.[4]

Placing a capacitor in parallel with each input resistor decreases the time needed for a driving stage to back bias a driven stage's base-emitter junction. Engineers and technicians use “RCTL” (resistor capacitor transistor logic) to designate gates equipped with “speed-up capacitors.” The Lincoln Laboratory TX-0 computer's circuits included some RCTL.[5]

Using a high collector supply voltage and diode clamping decreased collector-base and wiring capacitance charging time. This arrangement required diode clamping the collector to the design logic level. This method was also applied to discrete DTL (diode–transistor logic).[6]

Another method used a diode and a resistor, a germanium and a silicon diode, or three diodes in an arrangement that reduced the voltage applied to the base as the collector approached saturation. Because the transistor went less deeply into saturation, the transistor accumulated fewer stored change carriers. Therefore, less time was required to clear stored charge during transistor turn off.[4] Because DTL usually required a diode in series with the transistor's base terminal, this method applied more directly to DTL.

None of these methods found their way into major integrated logic families—at least not in direct integration of the discrete implementations.

[edit] References

  1. ^ Form 223-688, IBM (1960). Form 223-6889-Transistor Component Circuits. IBM. Retrieved on 2008-03-05. 
  2. ^ David L. Morton Jr. and Joseph Gabriel (2007). Electronics: The Life Story of a Technology. JHU Press. ISBN 0801887739. 
  3. ^ a b Donald E. Lancaster (1969). RTL cookbook. Bobbs-Merrill Co. (or Howard W Sams). ISBN 067220715X. 
  4. ^ a b Cleary, J. F. (ed.) (1958–1964). GE Transistor Manual, third through seventh editions, General Electric, Semiconductor Products Department, Syracuse, NY. 
  5. ^ Fadiman, J. R. (1956). TX0 Computer Circuitry. MIT Lincoln Laboratory. Retrieved on 2008-03-04. 
  6. ^ DEC, Flip_Chip (1967). The Digital Logic Handbook. Digital Equipment Corporation. Retrieved on 2008-03-08. 

[edit] See also