Plasma Enhanced Chemical Vapour Deposition

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Plasma Enhanced Chemical Vapour Deposition, PECVD or sometimes PCVD, is the process by which chemicals are deposited onto a substrate using a Radio Frequency (RF) Plasma to split the precursors into active ions.

[edit] Theory

Precursor chemical enter the chamber (which is generally in high vacuum) at a specified rate, high frequency RF is switched on and a plasma is ignited. Sometimes there is substrate heating to promote reactions.

[edit] Input Parameters

Pressure
Temperature
Radio Frequency (High and Low) power ratio
Gas flow ratio
Deposition time

[edit] Industry Uses

Semiconductors
Optoelectronics
Anti-reflexion coatings
Scratch-free surfaces
Dielectric deposition Oxi-Nitride.
Metal Deposition - Tungsten

Ex:
Silicon Dioxide, Silicon Nitride, Silicon
Tin oxide, Indium tin oxide
Copper oxide