Talk:MODFET

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I wonder if this is a bit misleading and maybe this entry should be combined with the HEMT entry since MODFET is, as far as my understanding goes, a precursor name to the 'HEMT'. On the other hand it might just be one of the family, see this patent:

http://www.patentstorm.us/patents/5721161-description.html

Which says: "A lattice-matched high electron mobility transistor (HEMT) is a type of MODFET, where a narrow-bandgap semiconductor material is lattice-matched to the wide-bandgap semiconductor material. A pseudomorphic high electron mobility transistor (pHEMT) is another type of MODFET where the narrow-bandgap semiconductor material is strained in relation to the wide-bandgap semiconductor material".

Also, I think that the GaAs-based MODFET may predate the SiGe ones as far as commercialisation goes - GaAs HEMTs were around two decades ago whereas SiGe devices are fairly recent. Royzee (talk) 15:17, 29 February 2008 (UTC)

Not sure if this helps, but I was under the impression that a HEMT was a type of MODFET. In my recent advanced electronic devices course though, they are treated as separate devices, but both using modulation doping to increase the mobility. Skela (talk) 06:01, 18 April 2008 (UTC)