Isobutylgermane
From Wikipedia, the free encyclopedia
| Isobutylgermane | |
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| IUPAC name | isobutylgermane |
| Properties | |
| Molecular formula | C4H12Ge |
| Molar mass | 132.78 g mol−1 |
| Related compounds | |
| Related compounds | GeH4 |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
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Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas. IBGe is useful in the deposition of pure Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe or GST in NAND Flash applications.
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[edit] Properties
IBGe is a non-pyrophoric source with very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (ca. 400 °C), coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as SiGe, SiGeC, strained silicon and GeSbTe.
[edit] Uses
Rohm and Haas, IMEM and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices.[1][2] It has been demonstrated that the growth of high quality germanium films at temperatures as low as 500 °C can be achieved[3]. The low growth temperature and the new precursor are expected to eliminate a memory effect of germanium in the III-V material.
[edit] References
- ^ Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Shenai-Khatkhate et al, Rohm and Haas Electronic Materials; Presentation at ACCGE-16, Montana, USA, July 11, 2005, and publication in Journal of Crystal Growth (2006)
- ^ Rohm and Haas Electronic Materials LLC, Metalorganics and Germanium Sources for MOVPE.
- ^ MOVPE growth of homoepitaxial germanium, M. Bosi et al. publication in Journal of Crystal Growth, 2008
[edit] Further reading
- IBGe: Brief description from National Compound Semiconductor Roadmap.
- Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si: Article in French from LPN-CNRS, France.
- Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films; Journal of Crystal Growth, January 25, 2006.
- Ge Precursors for Strained Si and Compound Semiconductors; Semiconductor International, April 1, 2006.
- 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。; Semiconductor International Chinese Edition, June 1, 2006.
- 歪みSiと化合物半導体向けの Geプリカーサ; Semiconductor International Japanese Edition, August 1, 2006.
- Rohm and Haas Electronic Materials Devises Germanium Film Growth Process; CompoundSemi News, September 23, 2005.
- High Purity Germanium Film; III-Vs Review, September 23, 2005.
- Development of New Germanium Precursors for SiGe Epitaxy; Deo Shenai and Egbert Woelk, Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006.
