Hybrid vapour phase epitaxy

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Hybrid Vapour Phase Epitaxy (HVPE) is used for high rate crystal growth. For example during Gallium nitride growth, HVPE uses ammonia(NH₃), and GaCl₂, which is formed by Hydrogen chloride flowing over Gallium melt, as sources with purified N₂ as carrier gas. The growth is typically performed at very high temperature, such as 1100 ^oC.^[1]