Talk:Gallium(III) phosphide
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OK,sorry, it's indirect. I looked at the reference: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaP/Figs/521.gif So hard for me to believe, with GaAs, GaN, and GaSb being direct. But true. And not as drastically indirect as silicon, so can have sharper absorption edge than Si. jimswen 10:23, 10 March 2007 (UTC)
Refractive Index changes pretty much with wavelength. At what exact nm is it 3.37? At 800nm it's about 3.18. jimswen 10:42, 8 March 2007 (UTC)
I'm sure GaP has a direct bandgap, not indirect. It's like GaAs. That's why it's used for LED's. And it has a sharp-cutoff "blue-blocker" clear orange color in polished optical-grade single-crystals. jimswen 10:32, 8 March 2007 (UTC)
GaP has lattice constant of 0.54505nm which is close to silicon 0.5431nm. Thus GaP:N might lead to improved Si-based multi-junction solar cells.
I removed the phrase: "It is an intrinsic semiconductor of n-type." This makes no sense. Intrinsic semiconductors are by definition neither p- nor n- type. Probably the author meant that unintentionally doped GaP grows with extrinsic n-doping from impurities, but that's certainly not what they said. Cm the p 18:21, 17 October 2006 (UTC)
