Talk:Gallium(III) nitride

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[edit] Developments

I'm not sure who originally wrote that high quality epitaxial GaN is "impossible to grow", but I changed it to "difficult". Mainly I did this because I know for a fact that it is possible, since I have read about 10 journal articles describing how to do it, and I watched someone do it in a lab last week, but I think maybe I should have just deleted the entire paragraph. It's outdated at best. Any objections? Jermor 17:11, 3 July 2007 (UTC)

If you know it is possible, and you have the references at hand, then why delete it. Maybe rewrite it into a section about 'growing high quality epitaxial GaN'? --Dirk Beetstra T C 17:18, 3 July 2007 (UTC)

I guess by "difficult" one means comparing it with other semiconductor material systems grown by comparative techniques. One measure of quality is the defect density which is certainly higher for GaN (still best in III-nitrides) than GaAs or Si. Moreover, morphology for gaN is still poor for these semiconductors. One of the reasons for such a quality is the absence of native substrates to grow nitrides on. I must say, however, that there is a tremendous amount of work going on in this respect with growth of bulk-like GaN by HVPE and high pressure techniques. Pranobmisra 20:14, 15 August 2007 (UTC)Pranob Misra

I appreciate the explanation and the comparison to Si and GaAs. GaN can also be grown by MOCVD and MBE, and despite the lack of a convenient substrate, buffer layers and other techniques are making the process a lot better. By the way, someone has made significant improvements to this article, and it looks a lot better now. Jermor (talk) 01:03, 5 December 2007 (UTC)