Image:EUVL phase defect.JPG

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EUVL_phase_defect.JPG‎ (449 × 460 pixels, file size: 35 KB, MIME type: image/jpeg)

[edit] Summary

Simulated aerial image of transparent EUVL 45 degree phase defect. The dotted-line white square is the phase defect edge. The dark region corresponds to the area of the image where the intensity was reduced more than 10%. The intensity reduction is localized around the phase edge. The illumination conditions are 13.5 nm wavelength, numerical aperture = 0.25, sigma (partial coherence) = 0.8. The defect size is 40 nm (wafer scale) and assumed pitch is 80 nm (wafer scale).

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	Date/Time	Dimensions	User	Comment
current	13:02, 29 May 2008	449×460 (35 KB)	Guiding light (Talk \| contribs)	(Simulated aerial image of transparent EUVL 45 degree phase defect. The dotted-line white square is the phase defect edge. The dark region corresponds to the area of the image where the intensity was reduced more than 10%. The intensity reduction is locali)
	04:22, 29 May 2008	735×512 (37 KB)	Guiding light (Talk \| contribs)	(Simulated aerial image of transparent EUVL phase defect. The dotted-line white square is the phase defect edge. The dark region corresponds to the area of the image where the intensity was reduced more than 10%. The intensity reduction is localized around)
	04:08, 29 May 2008	735×512 (35 KB)	Guiding light (Talk \| contribs)
	04:00, 29 May 2008	735×512 (41 KB)	Guiding light (Talk \| contribs)	(Simulated aerial image of EUVL phase defect. The dark region corresponds to the area of the image where the intensity was reduced more than 10%. The dotted-line white square is the mask pattern. The illumination conditions are 13.5 nm wavelength, numerica)