Cadmium arsenide
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| Cadmium arsenide | |
|---|---|
| Other names | Cadmium diarsenide |
| Identifiers | |
| CAS number | [12006-15-4] |
| EINECS number | |
| Properties | |
| Molecular formula | Cd3As2 |
| Molar mass | ? |
| Appearance | solid, dark grey |
| Density | 3.031 |
| Solubility in water | decomposes in water |
| Hazards | |
| NFPA 704 | |
| U.S. Permissible exposure limit (PEL) |
5 micrograms (Cd)/m3 |
| LD50 | no data |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references |
|
Cadmium arsenide (Cd3As2) is a crystalline semiconductor with a tetragonal structure in the II-V family. It is a narrow gap semiconductor with an energy gap of 0.14 eV. The electron mobility is very large at ambient temperature. It is a n-type intrinsic semiconductor.
Cadmium arsenide can be prepared as amorphous semiconductive glass.
Cadmium arsenide shows Nernst effect.
Cadmium arsenide is used in infrared detectors using Nernst effect, and in thin-film dynamic pressure sensors. It can be also used to make magnetoresistors, and in photodetectors. [1]
Cadmium arsenide can be used as a dopant for HgCdTe.

